The rapidity of the control device of Guangu magnetic grinding machine and the low conduction loss of the bipolar device, the main operating frequency is tens of kilohertz, and it is the mainstream power electronic device on the market. In fact, the upper limit of the blocking voltage of the IGBT is constantly being refreshed. In 1985, it was thought that the ultimate withstand voltage of IGBT was 2kV, but the current commercial IGBT has reached 6.6kV and is still improving.
The continuous improvement of the pressure and current resistance of Guangu magnetic grinders has gradually eroded the traditional territory of thyristors and GT0. Delta and Mitsubishi have cooperated to develop new generation products of GT0 through the distribution of integrated gate drive, shallow emitter and other technologies. An integrated gate commutated thyristor (IGCT) reduces the gate drive power and improves the switching speed. At present, IGCT has reached the development level of 9kV/6kA, and 6.5kV or 6kA devices have begun to be supplied to the market, and it is expected to become one of the preferred power electronic devices for high-voltage and high-power applications.
With the continuous breakthroughs in the process and production technology of the Guangu magnetic grinding machine, according to the optimal structure, one or more power devices and their driving and protection circuits are integrated on a silicon chip or substrate, and then packaged into an intelligent power module In this way, the volume of the device is reduced, it is convenient to use, and the circuit lead inductance is greatly reduced, thereby suppressing noise and parasitic oscillation. In the same occasion, a smaller capacity power device can be selected, which improves the efficiency and reliability of the entire system.
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